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GF180MCU

To use GF180MCU models, you need to include the model card with a specific process corner.

Available corners:

  • typical: Typical corner
  • ff: Fast-Fast corner
  • ss: Slow-Slow corner
  • fs: Fast-Slow corner
  • sf: Slow-Fast corner
  • statistical: Statistical Variation (Monte Carlo)

Add .include modelcard.GF180.<corner> in your netlist. For example:

.include modelcard.GF180.typical

or

.include modelcard.GF180.statistical

Usage Examples

Standard 3.3V NMOS (nmos_3p3)

This model can be used as a Subcircuit (X) or as a Primitive (M).

1. Subcircuit Usage (Recommended) Use the X prefix. This includes statistical mismatch parameters (delvto) and is required for Monte Carlo mismatch simulations.

* X<name> <Drain> <Gate> <Source> <Bulk> <Model> <Parameters>
X1 d g s b nmos_3p3 w=10u l=0.28u

2. Primitive Usage (Native) Use the M prefix. This uses the core model directly, bypassing the subcircuit wrapper. It does not include the mismatch variations defined in the subcircuit. Use this for simpler simulations or when mismatch is not needed.

* M<name> <Drain> <Gate> <Source> <Bulk> <Model> <Parameters>
M1 d g s b nmos_3p3 w=10u l=0.28u

6.0V Native NMOS (nmos_6p0_nat)

The nmos_6p0_nat is a Native (depletion-mode) device, often used for zero-threshold or low-voltage applications.

1. Subcircuit Usage

X1 d g s b nmos_6p0_nat w=10u l=1.8u

2. Primitive Usage

M1 d g s b nmos_6p0_nat w=10u l=1.8u

Difference between nmos_3p3 and nmos_6p0_nat:

  • nmos_3p3: Standard enhancement-mode MOSFET. Normally OFF (Vth > 0). Requires positive Vgs to conduct.
  • nmos_6p0_nat: Native (depletion-like) MOSFET. Lower threshold voltage (often near 0V or slightly negative). Can conduct at very low Vgs. Used in specific analog blocks (e.g., references, low-voltage switches).

SAB Models (e.g., nmos_3p3_sab)

SAB stands for Salicide Block. These models represent transistors where the silicide formation is blocked on the drain and/or source regions.

  • Purpose: Blocking silicide increases the resistance of the diffusion regions. This is primarily used for ESD (Electrostatic Discharge) protection devices to limit current and prevent damage during high-voltage events. It can also be used to create ballast resistors.
  • Model Details: The _sab subcircuits usually include additional resistors at the drain and/or source terminals to model this effect.
  • Parameters: s_sab (Source SAB length) and d_sab (Drain SAB length) control the resistance added.

Models List

MOSFETs (3.3V and 6.0V)

Model Name Description
nmos_3p3 3.3V NMOS
pmos_3p3 3.3V PMOS
nmos_6p0 6.0V NMOS
pmos_6p0 6.0V PMOS
nmos_3p3_sab 3.3V NMOS with Drain side SAB
pmos_3p3_sab 3.3V PMOS with Drain side SAB
nmos_6p0_sab 6.0V NMOS with Drain side SAB
pmos_6p0_sab 6.0V PMOS with Drain side SAB
nmos_6p0_nat 6.0V native NMOS

Diodes

Model Name Description
np_3p3 3.3V N+/Psub diode
pn_3p3 3.3V P+/Nwell diode
np_6p0 6.0V N+/Psub diode
pn_6p0 6.0V P+/Nwell diode
nwp_3p3 3.3V Nwell/Psub diode
nwp_6p0 6.0V Nwell/Psub diode
dnwpw PWELL/DNWELL diode
dnwps DNWELL/Psub diode
sc_diode Schottky Diode

BJTs

Model Name Description
vpnp_0p42x10 VPNP emitter 10umx0.42um
vpnp_0p42x5 VPNP emitter 5umx0.42um
vpnp_10x10 VPNP emitter 10umx10um
vpnp_5x5 VPNP emitter 5umx5um
vnpn_10x10 VNPN emitter 10umx10um
vnpn_5x5 VNPN emitter 5umx5um
vnpn_0p54x16 VNPN emitter 0.54umx16um
vnpn_0p54x8 VNPN emitter 0.54umx8um
vnpn_0p54x4 VNPN emitter 0.54umx4um
vnpn_0p54x2 VNPN emitter 0.54umx2um

Resistors

Model Name Description
nplus_u 3-term unsalicided n+ diff
pplus_u 3-term unsalicided P+ diff
nplus_s 3-term salicided N+ diff
pplus_s 3-term salicided P+ diff
nwell 3-term nwell under STI
npolyf_u 3-term unsalicided n+ poly
ppolyf_u 3-term unsalicided p+ poly
npolyf_s 3-term salicided n+ poly
ppolyf_s 3-term salicided p+ poly
ppolyf_u_1k 3-term 1k high-Rs p+ poly (3.3V)
ppolyf_u_2k 3-term 2k high-Rs p+ poly (3.3V)
ppolyf_u_1k_6p0 3-term 1k high-Rs p+ poly (6.0V)
ppolyf_u_2k_6p0 3-term 2k high-Rs p+ poly (6.0V)
ppolyf_u_3k 3-term 3k high-Rs p+ poly
rm1 2-term metal 1
rm2 2-term metal 2
rm3 2-term metal 3
tm6k 2-term top metal 6k
tm9k 2-term top metal 9k
tm11k 2-term top metal 11k
tm30k 2-term top metal 30k

Capacitors

Model Name Description
mim_1p5fF 1.5fF/um2 MIM (<=6V)
mim_1p0fF 1.0fF/um2 MIM (<=20V)
mim_2p0fF 2fF/um2 MIM (<=6V)
nmoscap_3p3 3.3V NMOS cap
pmoscap_3p3 3.3V PMOS cap
nmoscap_6p0 6.0V NMOS cap
pmoscap_6p0 6.0V PMOS cap
nmoscap_3p3_b 3.3V NMOS in Nwell cap
pmoscap_3p3_b 3.3V PMOS in Pwell cap
nmoscap_6p0_b 6.0V NMOS in Nwell cap
pmoscap_6p0_b 6.0V PMOS in Pwell cap
efuse 6V/(5V) efuse